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    超級結MOSFET 600V

    超級結MOSFET 600V

    Wayon WMOSTM C2是用于高壓功率MOSFET的新型基于硅的尖端技術。與傳統的VDMOS相比,采用先進的超級結原理,該技術可以顯著降低單位面積的RDS(on)。這項技術可以達到

    立即咨詢 立即咨詢
    聯系熱線 0755-86381630
    Wayon WMOSTM C2是用于高壓功率MOSFET的新型基于硅的尖端技術。與傳統的VDMOS相比,采用先進的超級結原理,該技術可以顯著降低單位面積的RDS(on)。這項技術可以達到
    主要特點和優勢


    超級結MOSFET 600V
    零件號描述包裹VDS(V)RDS(on)(Ω)@ VGS = 10V(最大)編號(A)@ TA = 25℃PD(寬)@ TA = 25℃VGS(V)VGS(th)(V)(典型值)
    WMJ80N65FDN通道SJ-MOS FDTO-247650.04780480303
    WMJ53N65FDN通道SJ-MOS FDTO-247650.07853378303
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    WMJ38N65FDN通道SJ-MOS FDTO-247650.11538277303
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    WML38N65FDN通道SJ-MOS FDTO-220F650.1153834303
    WMM38N65FDN通道SJ-MOS FDTO-263650.11538277303
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    WMN26N65FDN通道SJ-MOS FDTO-262650.21520147303.3
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    WMO16N60FDN通道SJ-MOS FDTO-252600.341386303
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    WMJ26N60C2N通道SJ-MOS C2TO-247600.1920147303.3
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    WMF04N60C2N通道SJ-MOS C2SOT-223-2L6002個34.6303.3
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    WMF10N60C2N通道SJ-MOS C2SOT-223-2L600.72857303.3
    WMK06N60C4N通道SJ-MOS C4TO-2206001.2538303.3
    WML06N60C4N通道SJ-MOS C4TO-220F6001.2521歲303.3
    WMM06N60C4N通道SJ-MOS C4TO-2636001.2538303.3
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    WMF06N60C4N通道SJ-MOS C4SOT-223-2L6001.255303.3
    WMK08N60C4N通道SJ-MOS C4TO-2206000.78645303.3
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    WMP14N60C4N通道SJ-MOS C4TO-2516000.381180303
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