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    超級結MOSFET 650V

    超級結MOSFET 650V

    Wayon WMOSTM C2是用于高壓功率MOSFET的新型基于硅的尖端技術。與傳統的VDMOS相比,采用先進的超級結原理,該技術可以顯著降低單位面積的RDS(on)。這項技術可以達到

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    Wayon WMOSTM C2是用于高壓功率MOSFET的新型基于硅的尖端技術。與傳統的VDMOS相比,采用先進的超級結原理,該技術可以顯著降低單位面積的RDS(on)。這項技術可以達到
    主要特點和優勢









    超級結MOSFET 650V
    零件號描述包裹VDS(V)RDS(on)(Ω)@ VGS = 10V(最大)編號(A)@ TA = 25℃PD(寬)@ TA = 25℃VGS(V)VGS(th)(V)(典型值)
    WMJ80N65C2N通道SJ-MOS C2TO-247650.0480480303
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